PULSAR^® 3000

Atomic Layer Deposition (ALD) for high-k

ASM is the most experienced in ALD, delivering superior technology and high productivity with its production-proven Pulsar ALD tool.

ASM is the clear leader in ALD and high-k materials for gate stack with thehighest market share and largest installed base. Pulsar tools are proven for mass production with HfO₂, HfSiO, HfZrO, La₂O₃, and Al₂O₃ processes. ASM holds the most patents in ALD and is engaged in strong R&D programs through its ASM MicroChemistry division and development partnerships with IMEC.

Polygon 8300 platform configured with 2 Pulsar 3000 ALD process modules

Pulsar ALD Applications

Gate Dielectrics

• HfO₂, HfZrO for high performance
• HfSiO, HfO₂ for low power
• La₂O₃ & Al₂O₃ for cap layer

Flash Dielectrics

• High speed (>200 Å/min) Al₂O₃ for IPD
• HfAlO / LaAlO / HfLaO for blocking layer
• La₂O₃ for charge trap layer

High Speed Alumina for

• Magnetic R/W heads
• FeRAM
• Ink jet heads
• OLED displays
• MEMS
  
  
  

Pulsar ALD Technology Advantage

ASM Pulsar Patented Technology

• Hot wall chamber for robust process control
• Small volume enables low ALD cycle times
• Cross flow design with perfect laminar flow
• Fast gas switching (Inert Gas Valve design)

Pulsar Reactor Design Enables

• Precise film composition control (HfSiO, LaAlO)
• Uniformity < 1 Å range across 300 mm wafer
• Repeatability <  0.5%
• Particles < 10 adders @ 0.10 µm
• Ultra-thin cap layer films < 5 Å